Regular dislocation networks in silicon as a tool for nanostructure devices used in optics, biology, and electronics.
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Regular dislocation networks in silicon as a tool for nanostructure devices used in optics, biology, and electronics. / Kittler, M; Yu, X; Mchedlidze, T; Arguirov, T; Vyvenko, O F; Seifert, W; Reiche, M; Wilhelm, Thomas; Seibt, M; Voss, O; Wolff, A; Fritzsche, W.
In: SMALL, Vol. 3, No. 6, 6, 2007, p. 964-973.Research output: SCORING: Contribution to journal › SCORING: Journal article › Research › peer-review
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TY - JOUR
T1 - Regular dislocation networks in silicon as a tool for nanostructure devices used in optics, biology, and electronics.
AU - Kittler, M
AU - Yu, X
AU - Mchedlidze, T
AU - Arguirov, T
AU - Vyvenko, O F
AU - Seifert, W
AU - Reiche, M
AU - Wilhelm, Thomas
AU - Seibt, M
AU - Voss, O
AU - Wolff, A
AU - Fritzsche, W
PY - 2007
Y1 - 2007
N2 - Well-controlled fabrication of dislocation networks in Si using direct wafer bonding opens broad possibilities for nanotechnology applications. Concepts of dislocation-network-based light emitters, manipulators of biomolecules, gettering and insulating layers, and three-dimensional buried conductive channels are presented and discussed. A prototype of a Si-based light emitter working at a wavelength of about 1.5 microm with an efficiency potential estimated at 1% is demonstrated.
AB - Well-controlled fabrication of dislocation networks in Si using direct wafer bonding opens broad possibilities for nanotechnology applications. Concepts of dislocation-network-based light emitters, manipulators of biomolecules, gettering and insulating layers, and three-dimensional buried conductive channels are presented and discussed. A prototype of a Si-based light emitter working at a wavelength of about 1.5 microm with an efficiency potential estimated at 1% is demonstrated.
M3 - SCORING: Zeitschriftenaufsatz
VL - 3
SP - 964
EP - 973
JO - SMALL
JF - SMALL
SN - 1613-6810
IS - 6
M1 - 6
ER -
