Regular dislocation networks in silicon as a tool for nanostructure devices used in optics, biology, and electronics.

  • M Kittler
  • X Yu
  • T Mchedlidze
  • T Arguirov
  • O F Vyvenko
  • W Seifert
  • M Reiche
  • Thomas Wilhelm
  • M Seibt
  • O Voss
  • A Wolff
  • W Fritzsche

Beteiligte Einrichtungen

Abstract

Well-controlled fabrication of dislocation networks in Si using direct wafer bonding opens broad possibilities for nanotechnology applications. Concepts of dislocation-network-based light emitters, manipulators of biomolecules, gettering and insulating layers, and three-dimensional buried conductive channels are presented and discussed. A prototype of a Si-based light emitter working at a wavelength of about 1.5 microm with an efficiency potential estimated at 1% is demonstrated.

Bibliografische Daten

OriginalspracheDeutsch
Aufsatznummer6
ISSN1613-6810
StatusVeröffentlicht - 2007
pubmed 17429814